- 您现在的位置：买卖IC网 > Sheet目录17378 > NCV8405ADTRKG (ON Semiconductor)IC DRIVER LOW SIDE DPAK-3
NCV8405, NCV8405A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating
Drain ? to ? Source Voltage Internally Clamped
Symbol
V DSS
Value
42
Unit
V
Drain ? to ? Gate Voltage Internally Clamped
Gate ? to ? Source Voltage
(R G = 1.0 M W )
V DGR
V GS
42
" 14
V
V
Continuous Drain Current
I D
Internally Limited
Power Dissipation ? SOT ? 223 Version
Power Dissipation ? DPAK Version
Thermal Resistance ? SOT ? 223 Version
Thermal Resistance ? DPAK Version
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
@ T T = 25 ° C (Note 1)
@ T A = 25 ° C (Note 1)
@ T A = 25 ° C (Note 2)
@ T C = 25 ° C (Note 1)
Junction ? to ? Ambient Steady State (Note 1)
Junction ? to ? Ambient Steady State (Note 2)
Junction ? to ? Tab Steady State (Note 1)
Junction ? to ? Ambient Steady State (Note 1)
Junction ? to ? Ambient Steady State (Note 2)
Junction ? to ? Case Steady State (Note 1)
P D
R q JA
R q JA
R q JT
R q JA
R q JA
R q JT
1.0
1.7
11.4
2.0
2.5
40
130
72
11
60
50
3.0
W
° C/W
Single Pulse Drain ? to ? Source Avalanche Energy
(V DD = 40 V, V G = 5.0 V, I PK = 2.8 A, L = 80 mH, R G(ext) = 25 W , TJ = 25 ° C)
E AS
275
mJ
Load Dump Voltage
V LD = V A + V S (V GS = 0 and 10 V, R I = 2.0 W , R L = 6.0 W , t d = 400 ms)
V LD
53
V
Operating Junction Temperature
Storage Temperature
T J
T stg
? 40 to 150
? 55 to 150
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface ? mounted onto min pad FR4 PCB, (2 oz. Cu, 0.06 ″ thick).
2. Surface ? mounted onto 2 ″ sq. FR4 board (1 ″ sq., 1 oz. Cu, 0.06 ″ thick).
+
I D
DRAIN
I G
+
VGS
?
GATE
SOURCE
VDS
?
Figure 1. Voltage and Current Convention
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
A9AAT-1202F
FLEX CABLE - AFE12T/AF12/AFE12T
HK10051N8S-T
INDUCTOR HIFREQ 1.8+/-0.3NH 0402
A9CCG-0902F
FLEX CABLE - AFG09G/AF09/AFG09G
A9CCG-0508F
FLEX CABLE - AFG05G/AF05/AFG05G
A9CAG-0204F
FLEX CABLE - AFG02G/AF02/AFE02T
ASPI-0410FS-330M-T4
INDUCTOR SHLD POWER 33.0UH SMD
A9CAG-1105F
FLEX CABLE - AFG11G/AF11/AFE11T
A9BAG-0304F
FLEX CABLE - AFF03G/AF03/AFE03T
相关代理商/技术参数
NCV8405ASTT1G
功能描述:MOSFET SELF PROTECTED LOW SIDE F
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NCV8405ASTT3G
功能描述:IC DRIVER LOW SIDE SOT-223-4 RoHS:是 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 内部开关 系列:- 标准包装:1 系列:- 类型:高端 输入类型:非反相 输出数:1 导通状态电阻:85 毫欧 电流 - 输出 / 通道:2A 电流 - 峰值输出:6A 电源电压:1.7 V ~ 5.5 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:4-UFDFN 裸露焊盘，4-TMLF? 供应商设备封装:4-TMLF?（1.2x1.6） 包装:剪切带 (CT) 其它名称:576-1574-1
NCV8405DTRKG
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Self-Protected Low Side Driver with Temperature and Current Limit
NCV8405STT1G
功能描述:MOSFET SELF-PROTECTED FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NCV8405STT3G
功能描述:MOSFET SELF-PROTECTED FET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NCV8406ADTRKG
功能描述:功率驱动器IC 65V, SMARTFET
RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
NCV8406ASTT1G
功能描述:MOSFET 65V, SMARTFET
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NCV8406ASTT3G
功能描述:MOSFET 65V SMARTFET
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube